| PART |
Description |
Maker |
| PTB20190 |
175 Watts, 470-806 MHz Digital Television Power Transistor
|
ERICSSON[Ericsson]
|
| MAX9982 MAX9982ETP |
"825MHz to 915MHz, SiGe High-Linearity Active Mixer"
825MHz to 915MHz / SiGe High-Linearity Active Mixer
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| RA03M8087M10 |
806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| M67760LC 60S_SPEC |
From old datasheet system
806-870MHz, 12.5V, 20W, FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA02M8087MD10 |
806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| MS1454 |
RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS
|
Advanced Power Technolo...
Advanced Power Technology
|
| EMK13H2H-48.806M |
OSCILLATORS 50PPM -40 85 3.3V 4 48.806MHZ TS CMOS 5X7 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 48.806 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| SC15A-5SDAC-Z |
Power Module
Switch-Power Non-Isolated DC-DC Converters 5V to 1.3-3.5V 15A 1-OUTPUT DC-DC REG PWR SUPPLY MODULE
|
Bourns, Inc.
|
| BSM50GD120DN2G C67070-A2521-A67 050D12G2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
